长期从事材料物性探索的理论计算研究和方法开发，在Physical Review Letters, Nano Letters, Nano Today 等国际期刊发表文章20余篇，获批国家专利1项。曾获耶鲁大学学术论坛和纽约计算量子物理中心学术论坛邀请报告。曾以第一完成人获吉林省自然科学学术成果奖。开发的二维半导体缺陷电离能评价方法曾被美国莱斯大学、新加坡计算所等近20个机构使用。开发的二维材料缺陷评价的连续介质模型被开源第一性原理计算软件JDFTx集成发布。

2007.09-2011.06 吉林大学，电子科学与技术，本科/工学学士
2011.09-2017.06 吉林大学，物理电子学，博士/工学博士

2018.04-2020.06 伦斯勒理工学院，博士后研究员
2020.07-2022.10 耶鲁大学，博士后研究员

（1） 低维材料及表界面体系
（2） 半导体材料缺陷
（3） 防结冰/控冰材料

1.Dan Wang, Dong Han, Xian-Bin Li, Sheng-Yi Xie, Nian-Ke Chen, Wen Quan Tian, Damien West, Hong-Bo Sun, and Shengbai Zhang, Determination of formation and ionization energies of charged defects in two-dimensional materials, Phys. Rev. Lett. 114, 196801 (2015).
2.Dan Wang, Xian-Bin Li, Dong Han, Wen Quan Tian, and Hong-Bo Sun, Engineering two-dimensional electronics by semiconductor defects, Nano Today 16, 30 (2017).
3.Dan Wang, Xian-Bin Li, and Hong-Bo Sun, Modulation Doping: A Strategy for 2D Materials Electronics, Nano Letters, 21, 6298 (2021).
4.Dan Wang, Dong Han, Xian-Bin Li, Nian-Ke Chen, Damien West, Vincent Meunier, Shengbai Zhang, and Hong-Bo Sun, Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: formulation and application to few-layer black phosphorus, Phys. Rev. B 96, 155424 (2017).
5.Dan Wang and Ravishankar Sundararaman, Layer dependence of defect charge transition levels in two-dimensional materials, Phys. Rev. B 101, 054103 (2020).
6.Dan Wang and Ravishankar Sundararaman, Substrate effects on charged defects in two-dimensional materials, Phys. Rev. Mater. 3, 083803 (2019). 7.Dan Wang, Dong Han, Damien West, Nian-Ke Chen, Sheng-Yi Xie, Wei Quan Tian, Vincent Meunier, Shengbai Zhang, and Xian-Bin Li, Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport, npj Comput. Mater. 5, 8 (2019).
8.Dan Wang, Xian-Bin Li, and Hong-Bo Sun, Native defects and substitutional impurities in two-dimensional monolayer InSe, Nanoscale 9, 11619 (2017).
9.Dan Wang, Dong Han, Xian-Bin Li, Sheng-Yi Xie, Nian-Ke Chen, Wei Quan Tian, Shengbai Zhang, and Hong-Bo Sun, Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: evaluated via constrained excitation, Appl. Phys. Lett. 109, 203113 (2016).
10.Sha Xia#, Dan Wang#, Nian-Ke Chen, Dong Han, Xian-Bin Li, and Hong-Bo Sun, Evaluation of charged defects in two-dimensional semiconductors for nanoelectronics: The WLZ extrapolation method, Annalen der Physik 532, 1900318 (2020).